ty n-channel mos fet 4v drive nch mos fet rsq045n03 z s t ru ctu r e z ex te rna l dime ns ions (unit : mm) z f eatu r es 1) low on-resist ance. 2) s p ace saving, small surf ace mount p a ckage (t smt 6 ). 3) low volt age drive (4v drive). z a pplic a t ions each lead has same dimensions tsmt6 0.4 (1) (5) (3) (6) (2) (4) 1pin mark 2.8 1.6 1.9 2.9 0.95 0.95 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 abbreviated symbol : ql sw itching z packag in g sp ecificatio n s z inne r c i rc uit (1) drain (2) drain (3) gate (4) source (5) drain (6) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (6) (1) (5) (2) (4) (3) package code taping basic ordering unit (pieces) rsq045n03 tr 3000 type z a b solute maximum ratings (t a= 25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 150 ? 55 to + 150 20 4.5 18 1.0 18 1.25 z t h e rmal resist an ce parameter c/w rth(ch-a) symbol limits unit channel to ambient 100 ? mounted on a ceramic board ? 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2 product specification
z electrical ch aracteristics (t a= 25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs =20v, v ds =0v v dd 15v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 1.0 ? 2.5 v v ds = 10v, i d = 1ma ? 27 3 8 i d = 4.5a, v gs = 10v ? 36 5 1 m ? m ? m ? i d = 4.5a, v gs = 4.5v ? 40 5 6 i d = 4.5a, v gs = 4v 3.5 ?? sv ds = 10v, i d = 4.5a ? 520 ? pf v ds = 10v ? 150 95 ? pf v gs =0v ? 12 ? p f f=1mhz ? 19 ? ns ? 41 ? ns ? 14 ? ns ? 6.8 ? ns ? 1.6 9.5 nc ? 2.3 ? nc v gs = 5v ?? nc i d = 4.5a v dd 15 v i d = 2.25a v gs = 10v r l =6.67 ? r g =10 ? r l =3.33 ? r g =10 ? z bo d y d i o d e ch aracteristics (source-drain) (t a= 25 c) v sd ?? 1.2 v i s = 1.0a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2 rsq045n03 product specification
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